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![Ptfe纳米伏/纳米颗粒[polytetrafluoroethelene，（c2f4）n）]，纯度：99.9％](https://imgehusr.chinacdnb2b.com/storage/app/images/products/4/2/s_1660560027_42.png)
Sio2/Si底物上的单层石墨烯，大小：2 细节
Technical Properties of Graphene Film: |
|
| Transparency | > 95 % |
| Coverage: | > 93% |
| Thickness (theoretical) | 0.340 nm |
| Sheet Resistance: | 500-530 Ohms/sq |
| Grain size | 6-10 μm |
Technical Properties of SiO2/Si Substrate: |
|
| Size (inch) | 2'' |
| Dry Oxide Thickness | 300 nm |
| Type | Phosphor doped/N type |
| Orientation | <100> |
| Resistivity | 0.001 - 0.01 |
| Thickness | 525 +/- 20 μm |
| Front surface | One Side Polished |
Applications:
Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics
SEM Image of Monolayer Graphene
Raman Image Of Monolayer Graphene
METHOD OF PREPARATION GRAPHENE ON SI/SIO2 SUBSTRATE WAS PREPARED BY THE FOLLOWING STEPS: |
| 1) Singlelayer graphene grown on copper foil |
| 2) Deposit PMMA and curing process |
| 3) Remove Cu by etching process |
| 4) Wash PMMA/Graphene in DI water |
| 5) Redeposit PMMA/Graphene onto Si substrate and curing process |
|
6) Remove PMMA with aceton |
关于 Nanographenex Nanotechnology Ltd
业务类型:
制造商/工厂
国家/地区:
Istanbul, 火鸡
主要产品: Nanographene...
年总收入:
不提供
成立时间:
不提供
业务性质
制造商/工厂
国家/地区
伊斯坦布尔, 火鸡
主要产品
Nanographene...
付款条件
Bank wire (T/T)
关于 Nanographenex Nanotechnology Ltd
Nanographenex Nanotechnology Ltd
